REPUBLIC OF SERBIA MINISTRY OF DEFENCE
MINISTRY OF DEFENCE Material Resources Sector Defensive Technologies Department
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Characterization of silicon piezoresistive MEMS pressure sensors for temperature measurement
Miloš FRantlović
IHTM–Institute of
Microelectronic Technologies and Single Crystals, Miloš Vorkapić
IHTM–Institute of
Microelectronic Technologies and Single Crystals, Dana Vasiljević-Radović
IHTM–Institute of
Microelectronic Technologies and Single Crystals,
Abstract: Temperature and pressure measurements are the most common measurements in industrial processes, but they are also necessary in defense systems. The Center of Microelectronic Technologies and Single Crystals performs research, development, and fabrication of MEMS piezoresistive pressure sensors and instruments based on them. In this paper we will present the first results of our research on the possibility of using such sensors for temperature measurements. Several piezoresistive pressure sensors are characterized in terms of their temperature measurement performance by using experimentally obtained data. Possible applications of the presented work would include the addition of the temperature measurement capability to some of the existing and new instruments, thus enabling the temperature of the fluid in contact with the pressure sensing element to be monitored.
Key words: pressure sensor, temperature sensor, MEMS.
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